SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to an embodiment includes a first active region and a second active region. The first active region includes a n-type first source region at a first surface of the SiC substrate having the first surface and a second surface, a n-type first drain region, a first gate insulating film, a first gate electrode, a p-type second source region at the first surface and electrically connected to the first source region, a p-type second drain region, a second gate insulating film, and a second gate electrode electrically connected to the first gate electrode. The second active region includes a n-type first SiC region at the first surface and electrically connected to the second drain region, a p-type second SiC region, a n-type third SiC region, a third gate insulating film, and a third gate electrode electrically connected to the first source region and the second source region.

主权项

1. A semiconductor device comprising:
a first active region; and a second active region, the first active region including: a n-type first source region provided at a first surface of a SiC substrate having the first surface and a second surface; a n-type first drain region provided at the first surface of the SiC substrate; a first gate insulating film provided on a portion of the first surface between the first source region and the first drain region; a first gate electrode provided on the first gate insulating film; a p-type second source region provided at the first surface of the SiC substrate and electrically connected to the first source region; a p-type second drain region provided at the first surface of the SiC substrate; a second gate insulating film provided on a portion of the first surface between the second source region and the second drain region; and a second gate electrode provided on the second gate insulating film and electrically connected to the first gate electrode, and the second active region including: a n-type first SiC region provided at the first surface of the SiC substrate and electrically connected to the second drain region; a p-type second SiC region provided between the first SiC region and the second surface; a n-type third SiC region provided between the second SiC region and the second surface; a third gate insulating film provided on the second SiC region; and a third gate electrode provided on the third gate insulating film and electrically connected to the first source region and the second source region.