DIVOT-FREE PLANARIZATION DIELECTRIC LAYER FOR REPLACEMENT GATE

摘要

After formation of a silicon nitride gate spacer and a silicon nitride liner overlying a disposable gate structure, a dielectric material layer is deposited, which includes a dielectric material that is not prone to material loss during subsequent exposure to wet or dry etch chemicals employed to remove disposable gate materials in the disposable gate structure. The dielectric material can be a spin-on dielectric material or can be a dielectric metal oxide material. The dielectric material layer and the silicon nitride liner are planarized to provide a planarized dielectric surface in which the disposable gate materials are physically exposed. Surfaces of the planarized dielectric layer is not recessed relative to surfaces of the silicon nitride layer during removal of the disposable gate materials and prior to formation of replacement gate structures, thereby preventing formation of metallic stringers.

主权项

1. A semiconductor structure comprising:
a replacement gate structure located on a semiconductor substrate; silicon nitride gate spacer located on sidewalls of said replacement gate structure; a silicon nitride liner in contact with outer surfaces of said silicon nitride gate spacers; and a planarization dielectric layer in contact with said silicon nitride liner, said planarization dielectric layer comprising a polycrystalline metal oxide.