| 发明名称 |
CONDUCTIVE CAP FOR METAL-GATE TRANSISTOR |
| 摘要 |
A semiconductor device includes a gate region, a conductive cap, and an interconnect. The gate region (e.g., a metal-gate transistor) includes a metal gate region and a high dielectric constant (high-K) gate dielectric region. The conductive cap is disposed on a surface of the metal gate region and on a surface of the high-K gate dielectric region, and the interconnect is disposed on the conductive cap. The conductive cap includes a conductive material that electrically connects the gate region to the interconnect. |
| 申请公布号 |
US2016276455(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201514661953 |
申请日期 |
2015.03.18 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Yang Haining;Song Stanley Seungchul |
| 分类号 |
H01L29/49;H01L29/06;H01L29/66;H01L21/28;H01L21/768;H01L21/3213;H01L23/528;H01L23/532;H01L29/51;H01L29/78 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a gate region, wherein the gate region includes a metal gate region and a high dielectric constant (high-K) gate dielectric region; a conductive cap disposed on a surface of the metal gate region and on a surface of the high-K gate dielectric region; and an interconnect disposed on the conductive cap, wherein the conductive cap includes a conductive material to electrically connect the gate region to the interconnect. |
| 地址 |
San Diego CA US |
