PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE SUBSTRATE, TRANSISTORS HAVING GATE OXIDES OF DIFFERENT THICKNESSES, AND CORRESPONDING INTEGRATED CIRCUIT

摘要

An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of the silicon-on-insulator type that includes a semiconductor film on a buried insulating layer on a carrier substrate. In the second zone, the semiconductor film has been removed. The second transistor in the second zone includes a gate-dielectric region resting on the carrier substrate that is formed by a portion of the buried insulating layer). The first transistor in the first zone includes a gate-dielectric region formed by a dielectric layer on the semiconductor film.

主权项

1. An integrated circuit, comprising:
a first zone including a substrate of the silicon-on-insulator type comprising a semiconductor film on a buried insulating layer on a carrier substrate; a second zone comprising said carrier substrate and said buried insulating layer but without presence of said semiconductor film; a first transistor in said second zone comprising a first gate-dielectric region resting on the carrier substrate and formed by a portion of said buried insulating layer.