MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY

摘要

A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.

主权项

1. A magnetic memory device comprising:
a first magnetic section including an extending portion extending in a first direction, the extending portion having a first interface extending along the first direction and a second interface extending along the first direction on opposite side from the first interface, the extending portion including a plurality of magnetic domains arranged along the first direction, magnetization easy axis of the extending portion being directed along a second direction crossing the first direction, and the extending portion including:
a first region provided between the first interface and the second interface and containing at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium; anda second region provided between the first region and the first interface and containing at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus, concentration of the first element in the second region being lower than concentration of the first element in the first region; a read section configured to read magnetization direction of one of the magnetic domain in the extending portion; and a write section configured to control the magnetization direction of one of the magnetic domain in the extending portion.