发明名称 |
Thin-Film Transistor Array Substrate And Method For Manufacturing Thin-Film Transistor Array Substrate |
摘要 |
A TFT array substrate and a method for manufacturing a TFT are disclosed. The TFT array substrate includes: a plurality of first metal lines, a first gap being formed between adjacent ones of the first metal lines; a plurality of second metal lines, a second gap being formed between adjacent ones of the second metal lines, the second metal lines and the first metal lines intersecting each other to form a plurality of overlapping sections; a first insulation layer arranged to stack between the first metal lines and the second metal lines to provide insulation between the first metal lines and the second metal lines; a second insulation layer set on and covering the second metal lines and arranged to stack on the second metal lines; and a transparent conductive film set on and covering the second insulation layer. |
申请公布号 |
US2016276368(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201414414099 |
申请日期 |
2014.09.16 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD. |
发明人 |
CHAI Li;ZHANG Xiaoxing |
分类号 |
H01L27/12;H01L23/532;H01L21/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A thin-film transistor (TFT) array substrate, comprising:
a plurality of first metal lines, a first gap being formed between adjacent ones of the first metal lines; a plurality of second metal lines, a second gap being formed between adjacent ones of the second metal lines, the second metal lines and the first metal lines intersecting each other to form a plurality of overlapping sections; a first insulation layer, which is stacked between the first metal lines and the second metal lines to provide insulation between the first metal lines and the second metal lines; a second insulation layer, which is set on and covers the second metal lines and is arranged to stack on the second metal lines; and a transparent conductive film, which is set on and covers the second insulation layer. |
地址 |
Shenzhen, Guangdong CN |