发明名称 Thin-Film Transistor Array Substrate And Method For Manufacturing Thin-Film Transistor Array Substrate
摘要 A TFT array substrate and a method for manufacturing a TFT are disclosed. The TFT array substrate includes: a plurality of first metal lines, a first gap being formed between adjacent ones of the first metal lines; a plurality of second metal lines, a second gap being formed between adjacent ones of the second metal lines, the second metal lines and the first metal lines intersecting each other to form a plurality of overlapping sections; a first insulation layer arranged to stack between the first metal lines and the second metal lines to provide insulation between the first metal lines and the second metal lines; a second insulation layer set on and covering the second metal lines and arranged to stack on the second metal lines; and a transparent conductive film set on and covering the second insulation layer.
申请公布号 US2016276368(A1) 申请公布日期 2016.09.22
申请号 US201414414099 申请日期 2014.09.16
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD. 发明人 CHAI Li;ZHANG Xiaoxing
分类号 H01L27/12;H01L23/532;H01L21/66 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin-film transistor (TFT) array substrate, comprising: a plurality of first metal lines, a first gap being formed between adjacent ones of the first metal lines; a plurality of second metal lines, a second gap being formed between adjacent ones of the second metal lines, the second metal lines and the first metal lines intersecting each other to form a plurality of overlapping sections; a first insulation layer, which is stacked between the first metal lines and the second metal lines to provide insulation between the first metal lines and the second metal lines; a second insulation layer, which is set on and covers the second metal lines and is arranged to stack on the second metal lines; and a transparent conductive film, which is set on and covers the second insulation layer.
地址 Shenzhen, Guangdong CN