发明名称 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) CASCODE CONNECTED TRANSISTOR CIRCUIT
摘要 A cascode transistor circuit having an active region, the active region having a source, a drain, a floating source/drain, a first gate disposed between the source and the floating source/drain and a second gate disposed between the floating source/drain and the drain. A first gate pad is displaced from the active region and is electrically connected to the first gate and a second gate pad is displaced from the active region and is electrically connected to the second gate. The first and the second gate pads are disposed on opposite sides of the active region.
申请公布号 US2016276337(A1) 申请公布日期 2016.09.22
申请号 US201514663974 申请日期 2015.03.20
申请人 Raytheon Company 发明人 Reed Thomas B.
分类号 H01L27/02;H01L29/417;H01L27/07 主分类号 H01L27/02
代理机构 代理人
主权项 1. A cascode transistor circuit, comprising: an active region having a source, a drain, a floating source/drain; a first gate disposed between the source and the floating source/drain; a second gate disposed between the floating source-drain and the drain; a first gate pad displaced from the active region and electrically connected to the first gate; a second gate pad displaced from the active region and electrically connected to the second gate; and wherein the first and the second gate pads are disposed on opposite sides of the active region.
地址 Waltham MA US