| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method for manufacturing the same which can increase a coupling ratio. <P>SOLUTION: An embedding insulator 4 is embedded in a trench 3 formed at a semiconductor substrate 2. An upper part of the embedding insulator 4 projects beyond a surface of the semiconductor substrate 2. A tunnel oxide film 5 is formed on a surface of the semiconductor substrate 2. A floating gate 6 is formed on the tunnel oxide film 5 on the side of the embedding insulator 4. A side of the floating gate 6 protrudes so as to approach an upper part of the embedding insulator 4, and the side face is composed of a planar face 10 and a curved face 11 contiguous to a lower part thereof. On the side face composed of an upper face 12, the planar face 10, and the curved face 11 of the floating gate 6, an ONO film 13 is formed in contact with each face thereof. A control gate 14 is formed on the ONO film 13. <P>COPYRIGHT: (C)2010,JPO&INPIT |
