| 摘要 |
The invention relates to a plasma treatment device for substrates and to a method for plasma-treating wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications. The device has an elongated processing chamber, which defines a receiving region for a wafer boat that is suitable for receiving a plurality of wafers; at least one gas conducting tube which extends in the processing chamber in the longitudinal direction and which is arranged on one side of the receiving region; and at least one gas conducting tube which extends in the processing chamber in the longitudinal direction and which is arranged on the opposite side of the receiving region. Each of the gas conducting tubes has a plurality of through-openings, which are spaced apart at least in the longitudinal direction of the gas conducting tubes, for the passage of gas, and the through-openings are formed in the gas conducting tube side facing the receiving region. Furthermore, at least one gas supply unit and at least one gas discharge unit are provided, wherein the at least one gas supply unit can be connected to at least one gas conducting tube, and the at least one gas discharge unit can be connected to the other gas conducting tube. In the method, a plurality of wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, are received in a wafer boat in the processing chamber of a plasma treatment device of the aforementioned type, and the method has the following steps: setting a desired gas atmosphere in the processing chamber by introducing at least one gas over the entire length of the wafer boat via at least one of the gas conducting tubes; and applying a high-frequency alternating voltage to the wafer boat in order to generate a plasma between the received wafers during a processing phase. |
