ALUMINUM-GALLIUM-INDIUM-PHOSPHORUS-BASED LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE LAYER OF UNEVEN TYPE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.

主权项

1. An AlGaInP-based light-emitting diode having a GaN layer located around an electrode on an upper surface of a GaP window layer.