发明名称 System and Method for Test Key Characterizing Wafer Processing State
摘要 Disclosed herein is a method for forming a test key system for characterizing wafer processing states, the method comprising forming a plurality of shallow trench isolation structures (STIs) on a substrate of a wafer and in a scribe line of the wafer and forming a test key on the substrate of a wafer and in the scribe line of the wafer. Forming the test key comprises forming at least one test key group having a plurality of test key series, each of the plurality of test key series having a plurality of test pads, each one of the plurality of test key series having a first physical characteristic different from the first physical characteristic of other test key series the at least one first test key group.
申请公布号 US2016372390(A1) 申请公布日期 2016.12.22
申请号 US201615250764 申请日期 2016.08.29
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Wann Clement Hsingjen;Yeh Ling-Yen;Shih Chi-Yuan;Tsai Wei-Chun
分类号 H01L21/66;H01L29/06;H01L27/088;H01L23/544 主分类号 H01L21/66
代理机构 代理人
主权项 1. A wafer, comprising: at least one dicing street defined on a substrate of the wafer, the at least one dicing street separating die areas; and at least one test key series in the at least one dicing street, the at least one test key series comprising: a plurality of test pads, each of the plurality of test pads separated from another test pad of the plurality of test pads by a shallow trench isolation structure (STI); wherein each of the plurality of test pads in each of the at least one test key series has at least one fin, each test pad of the plurality of test pads in a test key series having a different number of fins.
地址 Hsin-Chu TW