| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for sufficiently ensuring an insulation breakdown voltage of a gate oxide film in a method of manufacturing insulated gate type semiconductor devices using a CZ substrate. <P>SOLUTION: A method of manufacturing a semiconductor device includes: a process for forming the gate oxide film 10 containing hydrogen on the surface of the CZ substrate 6 by a plasma CVD method; and a process for heat-treating the gate oxide film 10. By heat-treating the gate oxide film 10, a reduction reaction occurs between hydrogen in the gate oxide film 10 and oxygen deposit defects existing in the CZ substrate 6 near the interface between the gate oxide film 10 and the CZ substrate 6, thus removing the oxygen in the CZ substrate 6, and hence sufficiently ensuring the insulation breakdown voltage of the gate oxide film 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
