| 摘要 |
A semiconductor memory device comprises: a first bit line connected to a memory cell via a first switching element; a second bit line connected to a reference cell via a second switching element; a reference potential writing circuit for writing a reference potential in the reference cell; an equalizing circuit for equalizing the first and second bit lines in potential; a sense amplifier for detecting data in the memory cell on the basis of a difference in potential between the first and second bit lines; and a control section for reading data in the memory cell and data in the reference cell to the first bit line and the second bit line, respectively, and thereafter for activating the sense amplifier and roughly simultaneously turning off the second switching element. In the semiconductor memory device, the reference cell writing potential can be stabilized without fluctuations for higher operation reliability; the operating current can be reduced for lower current consumption; and the cycle time can be reduced for higher speed operation.
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