| 摘要 |
<p>PURPOSE:To obtain an insulating maternal for an etching mask and an etching stopper by mixing a material difficult to combine with a halogenous element in an electrical insulating material. CONSTITUTION:A first insulating film 13, a first conductor film 14, a second insulating film 15, a third insulating film 16, a fourth insulating film 17 and a second conductor film 18 are successively laminated on a substrate 12 in a thin-film structure 11. The second and fourth insulating films 15 and 17 are utilized each as an interlayer insulating film. The substrate 12 is made of Si, and the first and third insulating films 13 and 16 are made of SiO2. A material difficult to combine with the halogenous elements such as Cl2 and F2 is mixed in the second and fourth insulating films 15 and 17 consisting essentially of SiO2. This material has a low vapor pressure and is difficult to vaporize. Cu is used for the material, and Cr, Au, Ag, Mo, etc., are also used. Consequently, an insulating material to be provided in various electronic parts is furnished.</p> |
