发明名称 |
Nitride-based heterostructure devices |
摘要 |
A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.
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申请公布号 |
US2004183096(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20040768944 |
申请日期 |
2004.01.30 |
申请人 |
KHAN MUHAMMAD ASIF;GASKA REMIGIJUS;SHUR MICHAEL;YANG JINWEI |
发明人 |
KHAN MUHAMMAD ASIF;GASKA REMIGIJUS;SHUR MICHAEL;YANG JINWEI |
分类号 |
H01L21/20;H01L21/205;H01L33/00;H01L33/32;H01L41/22;(IPC1-7):H01L21/00;H01L31/033 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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