发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge of f after forming the opening in the same chamber as the formation of the opening.
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申请公布号 |
US2009075479(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080265763 |
申请日期 |
2008.11.06 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
TABARU KENJI |
分类号 |
H01L21/304;H01L21/3065;H01L21/28;H01L21/311;H01L21/321;H01L21/768;H01L23/532 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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