发明名称 |
METHOD OF GROWING SEMI-POLAR NITRIDE SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME |
摘要 |
A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 <o ostyle="single">22) plane.
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申请公布号 |
US2009155947(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080246594 |
申请日期 |
2008.10.07 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PAEK HO SUN;LEE JEONG WOOK;SUNG YOUN JOON |
分类号 |
H01L21/205;H01L33/00;H01L33/16 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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