High voltage device fabricated using low-voltage processes

摘要

A high-voltage transistor includes an active region including a diffused region of a first conductivity type defined by inner edges of a border of shallow trench isolation. A gate having side edges and end edges is disposed over the active region. Spaced apart source and drain regions of a second conductivity type opposite the first conductivity type are disposed in the active region outwardly with respect to the side edges of the gate. Lightly-doped regions of the second conductivity type more lightly-doped than the source and drain regions surround the source and drain regions and extend inwardly between the source and drain regions towards the gate to define a channel, and outwardly towards all of the inner edges of the shallow trench isolation. Outer edges of the lightly-doped region from at least the drain region are spaced apart from the inner edges of the shallow trench isolation.

主权项

1. A high-voltage transistor comprising:
an active region including a diffused region of a first conductivity type defined by inner edges of a border of shallow trench isolation; a gate having side edges and end edges disposed over and insulated from the active region; spaced apart source and drain regions of a second conductivity type opposite the first conductivity type disposed in the active region outwardly with respect to the side edges of the gate; first lightly-doped regions of the second conductivity type more lightly doped than the source and drain regions, the first lightly-doped regions extending inwardly between the source and drain regions towards the gate to define a channel under the gate; second lightly-doped regions of the second conductivity type more lightly doped than the source and drain regions that extend outwardly from at least the drain region towards the inner edges of the shallow trench isolation, outer edges of the second lightly doped regions being spaced apart from the inner edges of the shallow trench isolation throughout the entire volume of the active region by portions of the active region that extend laterally from the outer edges of the second lightly-doped regions to the inner edges of the shallow trench isolation.