| 发明名称 | Method for fabricating IGZO layer and TFT | ||
| 摘要 | Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. By forming an oxidizing gas protective layer, the present methods for fabricating an IGZO layer and fabricating TFT can effectively reduce the effect of hydrogen atom on IGZO layer and avoid the change of IGZO layer from semiconductor to conductor, thereby improving the stability of the IGZO layer and thus the TFT, and reducing the negative bias of threshold voltage generated by the long-term continuous use of the device. | ||
| 申请公布号 | US9368602(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201414318178 | 申请日期 | 2014.06.27 |
| 申请人 | EverDisplay Optronics (Shanghai) Limited | 发明人 | Huang Chia-chi;Hsu Min-ching;Tsai Hsueh-ming;Zuo Wen-xia |
| 分类号 | H01L21/00;H01L21/16;H01L21/44;H01L29/66;H01L29/786 | 主分类号 | H01L21/00 |
| 代理机构 | Eaton & Van Winkle | 代理人 | Ren Yungling;Eaton & Van Winkle |
| 主权项 | 1. A method for fabricating TFT, including the steps of: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer, wherein the surface oxidizing gas protective layer is formed by introducing a gas mixture of oxygen and argon after the deposition of the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. | ||
| 地址 | Shanghai CN | ||