| 发明名称 | Solder balls and semiconductor device employing the same | ||
| 摘要 | A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented. | ||
| 申请公布号 | US9391039(B2) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201414446788 | 申请日期 | 2014.07.30 |
| 申请人 | MK Electron Co., Ltd. | 发明人 | Moon Jeong Tak;Son Jae Yeol;Kumar Santosh;Kim Eung Jae;Kim Hui Joong;Cha Ho Gun |
| 分类号 | H01L23/48;H01L23/00;H01B1/02 | 主分类号 | H01L23/48 |
| 代理机构 | Brinks Gilson & Lione | 代理人 | Brinks Gilson & Lione |
| 主权项 | 1. A Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, wherein the second plating layer comprises a Sn—Ag—Cu alloy, and wherein Ag3Sn intermetallic compound (IMC) nanoparticles and/or Ag—Sn compound nanoparticles exist in the second plating layer. | ||
| 地址 | KR | ||