发明名称 |
VOLTAGE CONTROLLED NANO-MAGNETIC RANDOM NUMBER GENERATOR |
摘要 |
Described is an apparatus for a voltage controlled nano-magnetic random number generator. The apparatus comprises: a free ferromagnetic layer; a fixed ferromagnetic layer positioned in a non-collinear direction relative to the free ferromagnet layer; and a first terminal coupled to the free ferromagnetic layer, the first terminal to provide a bias voltage to the free ferromagnetic layer. Described is also an integrated circuit comprising: a random number generator including a magnetic tunnel junction (MTJ) device with non-collinearly positioned free and fixed ferromagnetic layers; and a circuit to provide an adjustable bias voltage to the free ferromagnetic layer, the circuit to control variance of current generated by the random number generator. |
申请公布号 |
US2016202954(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201314912895 |
申请日期 |
2013.09.27 |
申请人 |
INTEL CORPORATION |
发明人 |
MANIPATRUNI SASIKANTH;NIKONOV DMITRI;YOUNG IAN |
分类号 |
G06F7/58;H01L43/08;H01L43/10;G06F1/16 |
主分类号 |
G06F7/58 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
a free ferromagnetic layer; a fixed ferromagnetic layer positioned in a non-collinear direction relative to the free ferromagnetic layer; and a first terminal coupled to the free ferromagnetic layer, the first terminal to provide a bias voltage to the free ferromagnetic layer. |
地址 |
Santa Clara CA US |