Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module

摘要

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

主权项

1. A semiconductor device comprising:
a transistor comprising:
an oxide semiconductor film over a first insulating film;a gate insulating film over the oxide semiconductor film;a gate electrode over the gate insulating film;a second insulating film over the gate electrode;a third insulating film over the second insulating film;a source electrode over the third insulating film; anda drain electrode over the third insulating film,wherein the first insulating film comprises an oxide insulating film,wherein the second insulating film comprises a nitride insulating film,wherein the source electrode is electrically connected to the oxide semiconductor film, andwherein the drain electrode is electrically connected to the oxide semiconductor film, and a capacitor comprising:
a first conductive film;a second conductive film; andthe second insulating film, wherein the first conductive film and the gate electrode are provided over the same surface, wherein the second conductive film, the source electrode, and the drain electrode are provided over the same surface, and wherein the second insulating film is provided between the first conductive film and the second conductive film.