Thin film transistor of display apparatus

摘要

Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes an active layer and a first gate electrode with a gate insulator therebetween, and a source electrode and a drain electrode respectively disposed at both ends of the active layer. The gate electrode branches as a plurality of lines and overlaps the active layer. The active layer includes one or more channel areas between the source electrode and the drain electrode, one or more dummy areas, and a plurality of link areas between the one or more channel areas to connect the one or more channel areas in one pattern. A length of each of the one or more dummy areas extends from an edge of a corresponding channel area.

主权项

1. A thin film transistor (TFT) of a display apparatus, the TFT comprising:
an active layer on a substrate; a plurality of lines of a first gate electrode overlapping the active layer, the first gate electrode branching as a plurality of lines; a gate insulator between the active layer and the first gate electrode; and a source electrode and a drain electrode respectively at two ends of the active layer, wherein the active layer comprises:
one or more channel areas between the source electrode and the drain electrode;one or more dummy areas, a length of each of the one or more dummy areas extending from an edge of a corresponding channel area perpendicular to an operating current in the one or more channel areas; anda plurality of link areas between the one or more channel areas to connect the one or more channel areas in one contiguous area,wherein the one or more channel areas and the plurality of link areas are of a same layer.