| 发明名称 | Plasma etching method | ||
| 摘要 | A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched. | ||
| 申请公布号 | US9449842(B2) | 申请公布日期 | 2016.09.20 |
| 申请号 | US201414447615 | 申请日期 | 2014.07.31 |
| 申请人 | Hitachi High-Technologies Corporation | 发明人 | Ishimaru Masato;Abe Takahiro;Suyama Makoto;Shimada Takeshi |
| 分类号 | H01L21/3065;H01L21/3213;H01L43/12 | 主分类号 | H01L21/3065 |
| 代理机构 | Miles & Stockbridge P.C. | 代理人 | Miles & Stockbridge P.C. |
| 主权项 | 1. A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask which is patterned to the prescribed size, wherein the plasma etching is conducted in an induction coupling plasma etching apparatus provided with a Faraday shield, the method comprising: etching the film to be etched to the size smaller than the prescribed size; and hardening side walls of the mask by applying a radio frequency voltage to the Faraday shield to positively deposit a protection film on the side walls, the radio frequency voltage being in a range of 50 V to 250 V. | ||
| 地址 | Tokyo JP | ||