| 摘要 |
The present invention relates to a silicon carbide ceramic material using an atmospheric sintering scheme, which is dense, which has excellent corrosion resistance and chemical resistance against plasma, which has an excellent thermal conductivity and a low thermal expansion ratio such that there is little concern of fracturing even when used for a long period of time, which has a low resistance such that arc generation can be suppressed inside a plasma atmosphere of etching equipment, which can be manufactured at a low cost and thus is economical, and which can be employed for a jig of semiconductor equipment, and a method for manufacturing the same. The present invention provides a method for manufacturing a silicon carbide ceramic material using an atmospheric sintering scheme, the method comprising: a material/raw material providing step for mixing alpha silicon carbide (α-SiC) powder or beta silicon carbide (β-SiC) powder and a liquid sintering agent at a predetermined ratio, thereby providing raw material powder; a slurry step for processing the raw material powder, which has been provided in the material/raw material providing step, into slurry; a drying/granulation step for drying and granulating the raw material powder, which has been processed into slurry in the slurry step; a molding step for molding the raw material powder, which has been granulated in the drying/granulating step, in a predetermined shape; a degreasing step for vacuum-degreasing the molded body, which has been molded in the molding step; and a sintering step for sintering the molded body, which has undergone the degreasing step. |
