发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
A semiconductor substrate including plural types of semiconductor layers exposed at a surface thereof is provided. A semiconductor substrate includes: a supporting substrate; a single-crystal, first semiconductor layer disposed on a surface of the supporting substrate; a single-crystal, second semiconductor layer disposed on parts of a surface of the first semiconductor layer; and a single-crystal, third semiconductor layer disposed on those parts of the surface of the first semiconductor layer on which the second semiconductor layer is not disposed. The third semiconductor layer has a crystal orientation aligned with that of the first semiconductor layer and is made of the same material as the first semiconductor layer. |
申请公布号 |
EP3089199(A4) |
申请公布日期 |
2016.12.07 |
申请号 |
EP20140874449 |
申请日期 |
2014.12.25 |
申请人 |
Kabushiki Kaisha Toyota Jidoshokki;Suda, Jun |
发明人 |
SUDA Jun;IMAOKA Ko;UCHIDA Hidetsugu |
分类号 |
H01L21/20;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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