发明名称 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 A semiconductor substrate including plural types of semiconductor layers exposed at a surface thereof is provided. A semiconductor substrate includes: a supporting substrate; a single-crystal, first semiconductor layer disposed on a surface of the supporting substrate; a single-crystal, second semiconductor layer disposed on parts of a surface of the first semiconductor layer; and a single-crystal, third semiconductor layer disposed on those parts of the surface of the first semiconductor layer on which the second semiconductor layer is not disposed. The third semiconductor layer has a crystal orientation aligned with that of the first semiconductor layer and is made of the same material as the first semiconductor layer.
申请公布号 EP3089199(A4) 申请公布日期 2016.12.07
申请号 EP20140874449 申请日期 2014.12.25
申请人 Kabushiki Kaisha Toyota Jidoshokki;Suda, Jun 发明人 SUDA Jun;IMAOKA Ko;UCHIDA Hidetsugu
分类号 H01L21/20;H01L21/205 主分类号 H01L21/20
代理机构 代理人
主权项
地址