| 发明名称 |
SILICON DOPING SOURCE FILMS BY ALD DEPOSITION |
| 摘要 |
A conformal thermal ALD film having a combination of elements containing a dopant, such as boron (or phosphorus), and an oxide (or nitride), in intimate contact with a semiconductor substrate said combination having stable ambient and thermal annealing properties providing a shallow (less than ˜100 A) diffused (or recoil implanted) dopant, such as boron (or phosphorus) profile, into the underlying semiconductor substrate. |
| 申请公布号 |
US2016379828(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201615191389 |
申请日期 |
2016.06.23 |
| 申请人 |
Mane Anil U.;Seidel Thomas E.;Current Michael I.;Goldberg Alexander;Elam Jeffrey W. |
发明人 |
Mane Anil U.;Seidel Thomas E.;Current Michael I.;Goldberg Alexander;Elam Jeffrey W. |
| 分类号 |
H01L21/225;H01L29/36;C23C16/56;C23C16/455;C23C16/30;C23C16/40 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A conformal thermal ALD film comprising a combination of elements and containing a dopant in intimate contact with a semiconductor substrate, said combination having stable ambient and thermal annealing properties providing a shallow diffused dopant profile into the semiconductor substrate. |
| 地址 |
Naperville IL US |
