Verfahren zur Herstellung von heteroepitaxischen dünnen Schichten und elektronischen Bauelementen

摘要

The invention relates to the field of thin monocrystalline layers deposited on a substrate of identical or different kinds from a vapour phase. On the substrate (1) of monocrystalline material A a cavity (3) is constructed which is determined by a face (10) of the substrate and a face (20) of a layer (2) made of material D so that there can be neither nucleation nor deposition on the faces (10, 20) exposed to the vapour phase. The growth takes place from a seed (4) of monocrystalline material B situated between the two faces (10, 20) of the substrate (1) and of the layer (2). The seed of monocrystalline material B may be of different kind from that of the substrate (for example substrate = silicon and material B = GaAs) and is produced, for example, by MBE or OMCVD. The material C to be grown is different from the material B of the seed. The material C is, for example, InP and the growth takes place by VPE. Applications: electronic and optoelectronic components.