发明名称 |
Formation of low k dielectric |
摘要 |
A method for creating low intra-level dielectric interface between conducting lines using conventional deposition and etching processes. A layer of conducting lines is formed interspersed with dielectric material. A dummy, high-density pattern of low k dielectric material is created on top of this layer. The dielectric material between the metal lines is removed. The dummy high-density pattern is interconnected, deposited on top of this interconnected layer is a low k dielectric to form an inter layer dielectric.
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申请公布号 |
US6150232(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19990244877 |
申请日期 |
1999.02.05 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHAN, LAP;CHA, CHER LIANG;ONG, KOK KENG;TEE, KHENG CHOK |
分类号 |
H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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