发明名称 Formation of low k dielectric
摘要 A method for creating low intra-level dielectric interface between conducting lines using conventional deposition and etching processes. A layer of conducting lines is formed interspersed with dielectric material. A dummy, high-density pattern of low k dielectric material is created on top of this layer. The dielectric material between the metal lines is removed. The dummy high-density pattern is interconnected, deposited on top of this interconnected layer is a low k dielectric to form an inter layer dielectric.
申请公布号 US6150232(A) 申请公布日期 2000.11.21
申请号 US19990244877 申请日期 1999.02.05
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 CHAN, LAP;CHA, CHER LIANG;ONG, KOK KENG;TEE, KHENG CHOK
分类号 H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/76 主分类号 H01L21/312
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