| 摘要 |
In a semiconductor laser device: an n-type lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of Inx3Ga1-x3As1-y3Py3, where 0<x3<=0.4 and 0<=y3<=0.1; an upper optical waveguide layer; a p-type In0.49Ga0.51P first upper cladding layer; an etching stop layer made of Inx1Ga1-x1As1-y1Py1, where 0<=x1<=0.3 and 0<=y1<=0.6; an n-type current confinement layer made of In0.49(Alz1Ga1-z1)0.51P, where 0<=z1<=0.1; an In0.49Ga0.51P cap layer; a p-type second upper cladding layer made of Inx4Ga1-x4As1-y4Py4, where x4=(0.49±0.01)y4 and 0.9<=y4<=1; and a p-type contact layer are formed on an n-type GaAs substrate in this order. Each of the etching stop layer, the current confinement layer, and the cap layer has a stripe-shape opening realizing a current injection window filled with the second upper cladding layer. The absolute value of the product of the strain and the thickness of the compressive strain quantum well active layer is equal to or smaller than 0.25 nm; and the absolute value of the product of the strain and the thickness of the etching stop layer is equal to or smaller than 0.25 nm. Each of the lower cladding layer, the lower optical waveguide layer, the upper optical waveguide layer, the first upper cladding layer, the current confinement layer, the cap layer, the second upper cladding layer, and the contact layer has such a composition as to lattice-match with the GaAs substrate.
|
