发明名称 |
Manufacturing semiconductor sensor, especially a pressure or acceleration sensor using two single crystal semiconductors to reduce production costs and increase reliability |
摘要 |
A hollow (2) is produced in a semiconductor body (1). Insulation zones (30) are produced between first (14) and second (12) electrode zones that surround the hollow space. An Independent claim is made for a sensor element comprising two electrode zones each made from a single crystal semiconductor. |
申请公布号 |
DE10100438(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
DE2001100438 |
申请日期 |
2001.01.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
RUEB, MICHAEL;WERNER, WOLFGANG;KOLB, STEFAN |
分类号 |
B81B3/00;G01L9/00;G01P15/08;G01P15/125 |
主分类号 |
B81B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|