发明名称 Manufacturing semiconductor sensor, especially a pressure or acceleration sensor using two single crystal semiconductors to reduce production costs and increase reliability
摘要 A hollow (2) is produced in a semiconductor body (1). Insulation zones (30) are produced between first (14) and second (12) electrode zones that surround the hollow space. An Independent claim is made for a sensor element comprising two electrode zones each made from a single crystal semiconductor.
申请公布号 DE10100438(A1) 申请公布日期 2002.07.18
申请号 DE2001100438 申请日期 2001.01.08
申请人 INFINEON TECHNOLOGIES AG 发明人 RUEB, MICHAEL;WERNER, WOLFGANG;KOLB, STEFAN
分类号 B81B3/00;G01L9/00;G01P15/08;G01P15/125 主分类号 B81B3/00
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