| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a shape of a capacitor in a logic part is not limited, and which can freely be designed, and to provide the manufacturing method of the semiconductor device. SOLUTION: The semiconductor device is provided with a semiconductor substrate, a DRAM and the logic part which are formed on the semiconductor substrate, an insulating film formed on the semiconductor substrate, a first capacitor which is formed in the insulating film of the DRAM and constitutes a memory cell, and a second capacitor formed in an insulating film of the logical part. The lower electrode of the first capacitor is formed of a first metal film made on an inner wall of a first groove formed in the insulating film of the DRAM. The lower electrode of the second capacitor is formed of a second metal film made on an inner wall of a second groove formed in the insulating film of the logic part, and of a third metal film which is integrally formed on an upper face of the insulating film of the logic part with the second metal film. COPYRIGHT: (C)2006,JPO&NCIPI
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