| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a nonvolatile memory of good charge retaining micronized characteristics. SOLUTION: A nonvolatile memory 20 comprises a first region 10X and a second regions 10Y and Z partitioned by an embedded insulating layer 12 formed on a semiconductor layer 10, a control gate composed of an impurity layer 28 which is formed in the first region 10X, a gate insulating layer 22 formed above the first region 10X and second regions 10Y and Z, a floating gate electrode 24 composed of one layer formed above the gate insulating layer 22 while continuing above the first region 10X and the second regions 10Y and Z, and impurity regions 32 and 34 of the second regions 10Y and Z to be a source region or a drain region that are formed on the semiconductor layer 10 formed at the side of the floating gate electrode 24. The control gates 28 of the plurality of nonvolatile memories 20 are composed of continuous impurities layers. COPYRIGHT: (C)2006,JPO&NCIPI
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