MANUFACTURE PROCESS OF SILICON SINGLE CRYSTAL AND MANUFACTURE PROCESS OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing process of a low resistivity silicon single crystal by which a silicon wafer having a crystal axis orientation [110] is obtained and dislocations are sufficiently eliminated and a manufacturing process of a low-resistivity silicon wafer having a crystal axis orientation [110] from the silicon single crystal obtained by the manufacturing process. SOLUTION: In the silicon single crystal manufacturing process employing a CZ method, a silicon single crystal whose center axis is inclined by 0.6°-10°relative to the crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that the boron concentration is in the range from 6.25×1017-2.5×1020atoms/cm3, the center axis of the silicon seed crystal is inclined by 0.6°-10°relative to the crystal axis [110], and the silicon seed crystal has approximately the same boron concentration as that in the neck portion formed in the single crystal grown from the silicon melt. COPYRIGHT: (C)2008,JPO&INPIT