| 摘要 |
The present invention relates to a method of fabricating a semiconductor substrate that includes forming at least first and second device regions, wherein the first device region includes a first recess having interior surfaces oriented along a first set of equivalent crystal planes, and wherein the second device region includes a second recess having interior surfaces oriented along a second, different set of equivalent crystal planes. The semiconductor device structure formed using such a semiconductor substrate includes at least one n-channel field effect transistor (n-FET) formed at the first device region having a channel that extends along the interior surfaces of the first recess, and at least one p-channel field effect transistor (p-FET) formed at the second device region having a channel that extends along the interior surfaces of the second recess.
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