| 摘要 |
The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.
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