| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of preventing an optical charge of photoelectric conversion elements adjacent to each other from mixing, and realizing miniaturization.SOLUTION: A solid state imaging device includes a plurality of pixels 103. The solid state imaging device further comprises: a first semiconductor layer 105 of a first electrical conduction type; a second semiconductor layer 107 of the first electrical conduction type adjacently arranged to the first semiconductor layer 105; a second electrical conduction type semiconductor region 111 arranged in the second semiconductor layer 107; a deep groove 123 that insulates and separates the neighboring pixels 103; and an electrode 127 embedded in the deep groove 123. The electrical conduction type semiconductor region 111, the second semiconductor layer 107, and the first semiconductor layer 105 are arranged in order from the front surface side. The second semiconductor layer 107 is separated in each pixels 103 by the deep grove 123. An impurity density of the first electrical conduction type of the first semiconductor layer 105 is higher than the impurity density of the first electrical conduction type of the second semiconductor layer 107. The deep grove 123 is contacted with the first semiconductor layer 105.SELECTED DRAWING: Figure 1 |
