| 摘要 |
The high voltage integrated circuit comprises a P substrate. An N well barrier is disposed in the substrate. Separated P diffusion regions forming P wells are disposed in the substrate for serving as the isolation structures. The low voltage control circuit is located outside the N well barrier. A floating circuit is located inside the N well barrier. In order to develop a high voltage junction barrier in between the floating circuit and the substrate, the maximum space of devices of the floating circuit is restricted.
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