Waveguide structure

摘要

A waveguide structure comprising: a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages. The electro-optic dielectric material has a Pockels tensor containing at least one non-vanishing element rij where i≠j, and the electrodes comprise a first set of electrodes provided substantially in direct contact with the electro-optic dielectric material, and a second set of electrodes comprising at least an electrode provided substantially in direct contact with the first layer and at least an electrode substantially in direct contact with the second layer, wherein the sets of electrodes are configurable to apply in the electro-optic material, at least a substantially horizontal electrical field and at least a substantially vertical electrical field that are orientated substantially perpendicular relative to each other.

主权项

1. A waveguide structure (1) comprising: a core (2) comprising a layer of at least an electro-optic dielectric material (3), a layer of at least a semiconductor material (4) provided below the electro-optic material (3) and a layer of at least a semiconductor material (5) provided above the electro-optic material (3), and electrodes (6, 6′, 7, 8), that are configurable for voltage application, wherein: the electro-optic dielectric material (3) has a Pockels tensor containing at least one non-vanishing element rij where i≠j, and the electrodes (6, 6′, 7, 8) comprise respective sets of electrodes (6, 6′, 7, 8) comprising a set of electrodes (6, 6′) that are provided substantially in direct contact with the electro-optic dielectric material (3), and a further set of electrodes (7, 8) comprising at least an electrode (7) provided substantially in direct contact with the semiconductor material (4) below the electro-optic material (3) and at least an electrode (8) provided substantially in direct contact with the semiconductor material (5) above the electro-optic material (3), wherein the respective sets of electrodes (6, 6′, 7, 8) are configurable to apply in the electro-optic material (3), when the waveguide structure (1) is in use, at least a substantially horizontal electrical field (11) and at least a substantially vertical electrical field (12) that are orientated substantially perpendicular relative to each other.