发明名称 Photoresist overcoat compositions and methods of forming electronic devices
摘要 Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
申请公布号 US9458348(B2) 申请公布日期 2016.10.04
申请号 US201514938340 申请日期 2015.11.11
申请人 Rohm and Haas Electronic Materials LLC 发明人 Bae Young Cheol;Bell Rosemary;Park Jong Keun;Lee Seung-Hyun
分类号 G03F7/11;C09D133/16;G03F7/004;G03F7/20;G03F7/30;H01L21/308;G03F7/32;C08K5/17;C08K5/3415;C08K5/3435;C09D133/10;G03F7/16 主分类号 G03F7/11
代理机构 代理人 Baskin Jonathan D.
主权项 1. A photoresist overcoat composition, comprising: a polymer comprising as polymerized units a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from C4 to C8 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; wherein the polymer is free of silicon and fluorine; an organic solvent; and a basic quencher; wherein the photoresist overcoat composition is free of acid generator compounds.
地址 Marlborough MA US