| 发明名称 |
Light emitting diode chip and method of manufacturing same |
| 摘要 |
A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color. |
| 申请公布号 |
US9508896(B2) |
申请公布日期 |
2016.11.29 |
| 申请号 |
US201514736778 |
申请日期 |
2015.06.11 |
| 申请人 |
ADVANCED OPTOELECTRONICS TECHNOLOGY, INC. |
发明人 |
Chiu Ching-Hsueh;Lin Ya-Wen;Tu Po-Min;Huang Shih-Cheng |
| 分类号 |
H01L33/08;H01L33/06;H01L33/00;H01L33/24;H01L33/32;H01L33/18 |
主分类号 |
H01L33/08 |
| 代理机构 |
|
代理人 |
Ma Zhigang |
| 主权项 |
1. A light emitting diode (LED) chip comprising:
a first semiconductor layer; a first light emitting layer formed on the first semiconductor layer and configured to emit a first light having a first color; a second light emitting layer formed on the first light emitting layer and configured to emit a second light having a second color; and a second semiconductor layer formed on the second light emitting layer; wherein the first semiconductor layer comprises an exposed first surface and a second surface enclosed by the first light emitting layer, the second light emitting layer and the second semiconductor. |
| 地址 |
Hsinchu Hsien TW |
