发明名称 |
CONTROLLER, SEMICONDUCTOR MEMORY SYSTEM AND OPERATING METHOD THEREOF |
摘要 |
An operating method of a controller includes: a first step of generating an internal codeword including an ECC unit data and an internal parity code by performing ECC decoding operation to an input data; a second step of updating an external parity code based on the ECC unit data, which is included in the internal codeword currently generated, and the ECC unit data, which is included in the internal codeword previously generated; and a third step of storing in a semiconductor memory device one or more internal codewords and the updated external parity code, which are generated through repetition of the first and second steps, by a unit of predetermined storage size. |
申请公布号 |
US2016378595(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201514958449 |
申请日期 |
2015.12.03 |
申请人 |
SK hynix Inc. |
发明人 |
RHO Jun-Rye;CHO Sung-Gun |
分类号 |
G06F11/10;H03M13/15;H03M13/29;G11C29/52 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
1. An operation method of a controller, comprising:
a first step of generating an internal codeword including an ECC unit data and an internal parity code by performing ECC encoding operation to an input data; a second step of updating an external parity code based on the ECC unit data, which is included in the internal codeword currently generated, and the ECC unit data, which is included in the internal codeword previously generated; and a third step of storing in a semiconductor memory device one or more internal codewords and the updated external parity code, which are generated through repetition of the first and second steps, by a unit of predetermined storage size, wherein, when a program operation ends during repetition of the first and second steps, the third step further adds a dummy code having a value representing a erase-state memory cell in the unit of predetermined storage size, which is not completely filled with the internal codewords and the external parity code. |
地址 |
Gyeonggi-do KR |