METHOD OF MANUFACTURING A VERTICAL SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a vertical semiconductor memory device is provided to implement a highly integrated vertical memory device using a selectively removable epitaxial structure. CONSTITUTION: An epitaxial structure is formed on a substrate(100). An opening(106), which exposes a part of the substrate, is formed by partly etching the epitaxial structure. A tunnel insulating film(108) is formed on the sidewall of the opening. A charge trapping film(110) is formed on the tunnel insulating film. A dielectric film(112) is formed on the charge trapping film. A word line pattern(114), which fills up the opening, is formed on the dielectric film.