发明名称 |
Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
摘要 |
A means to minimize physical distortion and modifications in the electrical properties of ferroelectric films incorporated into semiconductor devices is proposed. By introducing crystallographic texture into these ferroelectric films, the piezoelectric coefficient of the material can be minimized, reducing the interaction between a voltage across and mechanical stress on the film. In addition to having low piezoelectric coefficients, rhombohedral lead zirconate titanate films oriented along (111) exhibit low coercive fields and high remnant polarization, increasing their usefulness in layered semiconductor devices.
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申请公布号 |
US6396094(B1) |
申请公布日期 |
2002.05.28 |
申请号 |
US20000570185 |
申请日期 |
2000.05.12 |
申请人 |
AGILENT TECHNOLOGIES, INC.;TEXAS INSTRUMENTS, INC. |
发明人 |
MIRKARIMI LAURA WILLS;AMANO JUN |
分类号 |
C04B35/49;C23C14/08;C23C16/40;H01L21/314;H01L21/316;H01L21/8246;H01L27/105;H01L41/09;(IPC1-7):H01L29/76 |
主分类号 |
C04B35/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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