发明名称 |
Method of forming interconnections in semiconductor devices |
摘要 |
A method for forming an conductive interconnection in an electronic semiconductor device includes forming a layer of insulating material on a substrate of semiconductor material having a contact region therein, and forming a first opening through the layer of insulating material to expose the contact region. The first opening is filled with a material to form a first connection element. A first layer comprising a first removable conductive material is formed adjacent the layer of insulating material and the first connection element. The method further includes forming a second opening in the first layer to expose the first connection element, and filling the second opening with the material to form a second connection element. The first removable conductive material is removed except for a portion underlying the second connection element to expose the layer of insulating material. The areas left free after removing the first removable conductive material are filled with a dielectric material.
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申请公布号 |
US6475898(B2) |
申请公布日期 |
2002.11.05 |
申请号 |
US20010014921 |
申请日期 |
2001.12.11 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
NAPOLITANO MARIO |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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