发明名称 METHOD FOR SOLID-STATE SINGLE CRYSTAL GROWTH
摘要 The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50mm.
申请公布号 EP1549786(A1) 申请公布日期 2005.07.06
申请号 EP20030751495 申请日期 2003.10.09
申请人 CERACOMP CO., LTD. 发明人 LEE, HO-YONG;LEE, JONG-BONG;HUR, TAE-MOO;KIM, DONG-HO
分类号 C30B1/02;C30B1/04;C30B29/32 主分类号 C30B1/02
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