| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for reducing the warp of a semiconductor device which uses a lower substrate having a thermal expansion coefficient different from its lower seal resin layer. <P>SOLUTION: The semiconductor device 1 comprises a silicon substrate 2 having a wiring pattern formed by a plurality of wirings, a semiconductor chip 6 located above the silicon substrate 2 which is electrically connected to the wirings, a seal resin layer 9 substantially sealing the semiconductor chip 6 like a column, and a metal plate 10 substantially covering the entire upside of the seal resin layer 9. The metal plate 10 and the silicon substrate 2 have approximately the same thermal expansion coefficient. <P>COPYRIGHT: (C)2007,JPO&INPIT |
