| 摘要 |
<p>A vapor phase growth system comprising a chamber, a flow channel arranged in the chamber, a substrate arranged in the flow channel, a heating means for heating the substrate, a reaction gas supply means for supplying a reaction gas into the flow channel, and a view port provided onto the chamber. A through hole serving as an optical path when the substrate surface is observed optically through the view port is provided in the wall of the flow channel facing the substrate, a purge gas channel is provided between the outer surface of the flow channel wall provided with the through hole and a portion of the view port on the inner side of the chamber, and a purge gas introducing means for introducing a purge gas into the purge gas channel in the state of layer flow at the substantially same speed and the same pressure in the same direction as the reaction gas flowing through the flow channel is provided.</p> |
