发明名称 |
Metallic electrode forming method and semiconductor device having metallic electrode |
摘要 |
A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode. |
申请公布号 |
US2008217771(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20080073166 |
申请日期 |
2008.02.29 |
申请人 |
DENSO CORPORATION |
发明人 |
TOMISAKA MANABU;KOJIMA HISATOSHI;NIIMI AKIHIRO |
分类号 |
H01L21/66;H01L21/78;H01L23/498 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|