| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition for negative development excellent in line width variation (LWR), exposure latitude (EL) and focal depth allowance (DOF) in order to stably form a high accuracy fine pattern for the manufacture of a highly integrated and high accuracy electronic device, and a pattern forming method using the same. <P>SOLUTION: The resist composition for negative development includes (A) a resin which has an acid decomposable repeating unit and exhibits increased polarity and decreased solubility in a negative developer under the action of an acid, (B) a photoacid generator which generates an acid having one or two fluorine atoms upon irradiation with actinic rays or radiation, and (C) a solvent. <P>COPYRIGHT: (C)2010,JPO&INPIT |
